The Nazin Lab recently published a letter, “Creation and Annihilation of Charge Traps in Silicon Nanocrystals: Experimental Visualization and Spectroscopy,” in the Journal of Physical Chemistry Letters. These results, authored by Dmitry A. Kislitsyn, Jon M. Mills, Sheng-Kuei Chiu, Benjamen N. Taber, James D. Barnes, Christian F. Gervasi, Andrea Mitchell Goforth, and George V. Nazin, provide a direct visualization of the charge trap formation in individual SiNCs, the level of detail which until now had only been achieved in theoretical studies.

To view the letter, please visit: http://pubs.acs.org/doi/10.1021/acs.jpclett.7b03299.