Presenter: Benjamin Bachman
Faculty Mentor: Shannon Boettcher, Annie Greenaway
Presentation Type: Poster 45
Primary Research Area: Science
Major: Chemistry
Funding Source: UROP Mini-grant, University of Oregon, $1000
Indium gallium phosphide (InxGa1-xP) has shown promise as a potential material for photoelectrochemical (PEC) hydrogen generation through water-splitting, as well as for use as a passivation layer for high-efficiency gallium arsenide (GaAs) solar cells. We seek a better understanding of the growth conditions and source material preparation optimal for depositing InGaP2 onto GaAs using close-space vapor transport (CSVT). CSVT is a promising method for depositing materials such as InGaP2, because it uses less toxic precursors and has the potential to be scaled up to an industrial level. Using CSVT to deposit InGaP2 onto GaAs could potentially reduce the cost of manufacturing GaAs devices as well as reduce the risks involved that are inherent in status quo growth techniques such as metal-organic chemical vapor deposition. To characterize the InGaP2 we will utilize x-ray diffraction, x-ray fluorescence, Hall effect, SEM, non-aqueous photoelectrochemistry, and Mott-Schottkey analysis. Further work will determine if these devices would be well suited for PEC water-splitting or solar energy generation.